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1

Tri-halide vapor phase epitaxy of GaN using GaCl3 gas as a group III precursor

T. Yamane, K. Hanaoka, H. Murakami, Y. Kumagai, A. Koukitu

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 379 KB

english, 2011

2

Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor

Murakami, Hisashi, Takekawa, Nao, Shiono, Anna, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

3

Thick nonpolar m-plane and semipolar (

Iso, Kenji, Matsuda, Karen, Takekawa, Nao, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2017

Language:

english

File:

PDF, 939 KB

english, 2017

4

Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer

Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 245 KB

english, 2007

5

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1−xN using GaCl3 and InCl3

Yoshinao Kumagai, Kikurou Takemoto, Takahiro Hasegawa, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

6

Comparison of GaN growth processes on GaAs(1 1 1)A and (1 1 1)B substrates studied by ab initio calculation

Yuriko Matsuo, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 109 KB

english, 2002

7

As-grown preparation of Ag-doped Y-Ba-Cu-O superconducting thin films by mist microwave plasma chemical vapour deposition

N. Takahashi, A. Koukitu, H. Seki

Journal:

Journal of Materials Science Letters

Year:

1995

Language:

english

File:

PDF, 622 KB

english, 1995

8

Thermodynamic analysis of molecular beam epitaxy of III–V semiconductors

Hisashi Seki, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 715 KB

english, 1986

9

Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

Cho, H.C., Togashi, R., Murakami, H., Kumagai, Y., Koukitu, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 607 KB

english, 2013

10

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Kinoshita, Toru, Obata, Toshiyuki, Nagashima, Toru, Yanagi, Hiroyuki, Moody, Baxter, Mita, Seiji, Inoue, Shin-ichiro, Kumagai, Yoshinao, Koukitu, Akinori, Sitar, Zlatko

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 551 KB

english, 2013

11

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Hirasaki, Takahide, Asano, Kazuma, Banno, Mizuki, Ishikawa, Masato, Sakuma, Fumiaki, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.08 MB

english, 2014

12

[IEEE 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - New Orleans, LA, USA (2015.10.11-2015.10.14)] 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Current Status of Gallium Oxide-Based Power Device Technology

Higashiwaki, Masataka, Sasaki, Kohei, Wong, Man Hoi, Kamimura, Takafumi, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinor

Year:

2015

Language:

english

File:

PDF, 619 KB

english, 2015

13

Investigation of NH 3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy

Hirasaki, Takahide, Hasegawa, Tomoyasu, Meguro, Misaki, Thieu, Quang Tu, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.48 MB

english, 2016

14

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Hirasaki, Takahide, Eriksson, Martin, Thieu, Quang Tu, Karlsson, Fredrik, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Holtz, Per Olof, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

15

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga 2 O 3 (001) Schottky barrier diodes fabricated on n – –Ga 2 O 3 drift layers grown by halide vapor phase epitaxy

Higashiwaki, Masataka, Konishi, Keita, Sasaki, Kohei, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori, Kuramata, Akito,

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 677 KB

english, 2016

16

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl 3

Iso, Kenji, Matsuda, Karen, Takekawa, Nao, Murakami, Hisashi, Koukitu, Akinori

Journal:

physica status solidi (b)

Year:

2017

Language:

english

File:

PDF, 736 KB

english, 2017

17

Tri-halide vapor-phase epitaxy of GaN using GaCl 3 on polar, semipolar, and nonpolar substrates

Iso, Kenji, Takekawa, Nao, Matsuda, Karen, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, Akinori

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 708 KB

english, 2016

18

Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy

Kusaba, Akira, Kangawa, Yoshihiro, Kempisty, Pawel, Valencia, Hubert, Shiraishi, Kenji, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 870 KB

english, 2017

19

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Takekawa, Nao, Hayashida, Naoto, Ohzeki, Daisuke, Yamaguchi, Akira, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 1.41 MB

english, 2018

20

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

Iso, Kenji, Gokudan, Yuya, Shiraishi, Masumi, Nishikado, Minae, Murakami, Hisashi, Koukitu, Akinori

Journal:

Journal of Electronic Materials

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

21

Growth of GaN on a three-dimensional SCAAT TM bulk seed by tri-halide vapor phase epitaxy using GaCl 3

Iso, Kenji, Oozeki, Daisuke, Ohtaki, Syoma, Murakami, Hisashi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 957 KB

english, 2019

22

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

Ema, Kentaro, Uei, Rio, Murakami, Hisashi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 754 KB

english, 2019

23

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

Ema, Kentaro, Uei, Rio, Murakami, Hisashi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 754 KB

2019

24

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Yamaguchi, Akira, Oozeki, Daisuke, Kawamoto, Naoya, Takekawa, Nao, Bulsara, Mayank, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

Journal:

physica status solidi (b)

Year:

2020

File:

PDF, 877 KB

2020

25

Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine

A. Koukitu, Y. Kumagai, N. Kubota, H. Seki

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 188 KB

english, 1999

26

Influence of Polarity on Surface Reaction between GaN{0001} and Hydrogen

M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto, A. Koukitu

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

27

Thermodynamic Analysis of the MOVPE Growth of InAlN

A. Koukitu, Y. Kumagai, H. Seki

Journal:

physica status solidi (a)

Year:

2000

Language:

english

File:

PDF, 122 KB

english, 2000

28

Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy

T. Mitate, Y. Sonoda, K. Oki, N. Kuwano, Y. Kumagai, H. Murakami, A. Koukitu

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 151 KB

english, 2001

29

Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces

Y. Kumagai, H. Murakami, H. Seki, A. Koukitu

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 104 KB

english, 2001

30

Ab initio Calculations of GaN Initial Growth Processes on GaAs(111)A and GaAs(111)B Surfaces

Y. Matsuo, Y. Kumagai, T. Irisawa, A. Koukitu

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

31

Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process

Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1980

Language:

english

File:

PDF, 597 KB

english, 1980

32

The VPE growth of InGaAsP alloys by the single flat temperature method

Hisashi Seki, Akinori Koukitu, Mitsuyoshi Matsumura

Journal:

Journal of Crystal Growth

Year:

1981

Language:

english

File:

PDF, 214 KB

english, 1981

33

Vapor phase epitaxy of GaAs by the pulsed introduction of H2

Akinori Koukitu, Takeyuki Suzuki, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1985

Language:

english

File:

PDF, 250 KB

english, 1985

34

Thermodynamic analysis of the MOVPE growth process

Akinori Koukitu, Takeyuki Suzuki, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 359 KB

english, 1986

35

Thermodynamic analysis of the MOVPE growth of quaternary III–V alloy semiconductors

Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 599 KB

english, 1986

36

Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors

Akinori Koukitu, Hideo Nakai, Takeyuki Suzuki, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 451 KB

english, 1987

37

The VPE growth of InGaP by the single flat temperature zone method

Akinori Koukitu, Shoichi Simamura, Hideo Nakai, Takeyuki Suzuki, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 525 KB

english, 1988

38

Thermodynamic analysis of the MOVPE and MBE growth of pentanary III–V alloy semiconductors

Akinori Koukitu, Yoshitugu Hasegawa, Hisashi Seki, Erich Schönherr

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 465 KB

english, 1989

39

Atomic layer epitaxy of GaAsP and InAsP by halogen system

Koukitu, Akinori, Saegusa, Akihiko, Seki, Hisashi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 256 KB

english, 1990

40

Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3

Ryuji Kobayashi, Yoshito Jin, Fumio Hasegawa, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.07 MB

english, 1991

41

Atmospheric pressure atomic layer epitaxy of ZnS using Zn and H2S

Akinori Koukitu, Takayuki Miyazawa, Hitoshi Ikeda, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 431 KB

english, 1992

42

Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method

Hitoshi Ikeda, Yoshihide Nishiyama, Akinori Koukitu, Hisashi Seki, Koichi Kuroiwa

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 606 KB

english, 1992

43

In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer epitaxy

Akinori Koukitu, Naoyuki Takahashi, Yoshiki Miura, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 427 KB

english, 1995

44

In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods

Akinori Koukitu, Naoyuki Takahashi, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 538 KB

english, 1995

45

Growth of GaP by cold-wall metalorganic-chloride vapor phase epitaxy

Yoshiki Miura, Shinobu Ushijima, Naoyuki Takahashi, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 417 KB

english, 1994

46

Relationship between crystal structures and Pb addition of TlSrCaCuO superconducting thin films prepared by the mist microwave plasma chemical vapor deposition method

N. Takahashi, A. Koukitu, H. Seki

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 359 KB

english, 1995

47

Vapor-solid distribution in In1−xGaxAs and In1−xGaxP alloys grown by atomic layer epitaxy

Naoyuki Takahashi, Hitoshi Ikeda, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 289 KB

english, 1995

48

In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy

Akinori Koukitu, Naoyuki Takahashi, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 520 KB

english, 1996

49

Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy

Hitoshi Ikeda, Yoshiki Miura, Naoyuki Takahashi, Akinori Koukitu, Hisashi Seki

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 480 KB

english, 1994

50

Momentum-imaging spectroscopy of secondary ions from GaN and SiC surfaces collided with highly charged ions at grazing angle

Kenji Motohashi, Seiji Tsurubuchi, Akinori Koukitu

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 264 KB

english, 2005

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